AlGaN/AlN Epitaxial Growth on Native AlN Substrates
Our research focuses on advancing the epitaxial growth of AlGaN and AlN on native AlN substrates using MOCVD. The use of native substrates provides a pathway to overcome the limitations associated with heteroepitaxy, such as high threading dislocation densities and lattice mismatch. By optimizing growth conditions, precursor chemistry, and interface engineering, we aim to significantly reduce defect densities in AlN and AlGaN layers, thereby improving material quality and reliability. A key objective of this research is achieving high carrier concentrations in AlGaN or AlN epilayers, essential for next-generation high-power and high-frequency electronic devices. Through precise control of doping mechanisms, impurity incorporation, and strain management, our work seeks to enable superior electron transport properties and device performance. This research is vital for advancing UWBG semiconductors in power electronics, RF applications, and deep-UV optoelectronics.
AlN Power Devices
Our group is actively developing high-performance power electronic devices based on AlN, leveraging its ultra-wide bandgap, high breakdown field, and superior thermal conductivity. We have demonstrated state-of-the-art AlN Schottky barrier diodes (SBDs) with breakdown voltages exceeding 3 kV and low ideality factors, showcasing their potential for high-efficiency power conversion. Additionally, we are pioneering AlN metal-semiconductor field-effect transistors (MESFETs) with breakdown voltages surpassing 2 kV, highlighting the viability of AlN for next-generation high-power and high-frequency applications. Our work focuses on advancing AlN device design, fabrication, and characterization to unlock the full potential of this ultra-wide bandgap semiconductor for future power electronics.
AlN-Based High-Temperature Electronics
Our research explores the use of AlN as a platform for high-temperature electronic devices. With its ultra-wide bandgap, exceptional thermal conductivity, and chemical stability, AlN is ideally suited for operation in extreme environments where conventional semiconductors fail. We are developing AlN-based devices capable of reliable performance at elevated temperatures, focusing on material optimization, contact engineering, and robust device architectures. These efforts aim to enable next-generation electronics for applications in aerospace, automotive, energy, and harsh industrial environments.
