Our research focuses on ultra-wide bandgap (UWBG) semiconductors, including AlGaN, AlN, diamond, BN, and Ga₂O₃, to enable the next generation of high-performance electronic devices. These materials offer exceptional properties-such as high breakdown fields and wide bandgaps—that are critical for advancing energy-efficient power electronics, high-frequency communications, and high-temperature operation. Positioned at the intersection of electrical engineering, materials science, and applied physics, our work spans epitaxial growth, device fabrication, characterization, and simulation, driving innovation for future efficient electronic devices.
Explore ResearchPhD Positions available for Spring 2026 and Fall 2026 !!!
